Fabrication of SOI structure with AlN film as buried insulator by Ion-Cut process

Applied Surface Science

Volumn 199, Issue 1-4, 2002, Pages 287-292

  Men, Chuanling ^a,b   Xu, Zheng ^a   An, Zhenghua ^b,c   Chu, Paul K ^c   Wan, Qing ^b   Xie, Xinyun ^b   Lin, Chenglu ^b  

^a TONGJI UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

AlN film; Bonding; Ion beam enhanced deposition; SOI

Indexed keywords

ALUMINUM NITRIDE; DIELECTRIC PROPERTIES; ELECTRIC INSULATORS; FABRICATION; ION BEAM ASSISTED DEPOSITION; OPTIMIZATION; SILICON ON INSULATOR TECHNOLOGY; SURFACE ROUGHNESS; SYNTHESIS (CHEMICAL);

ION-BEAM ENHANCED DEPOSITION (IBED);

METALLIC FILMS;

EID: 0037202083     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00864-4     Document Type: Article

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