Preparation of AlN films by ion-beam-enhanced deposition

Chinese Physics Letters

Volumn 18, Issue 9, 2001, Pages 1282-1284

  Men, Chuan Ling ^a,b   Xu, Zheng ^a   Zheng, Zhi Hong ^b   Duo, Xin Zhong ^b   Zhang, Miao ^b   Lin, Cheng Lu ^b  

^a TONGJI UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; DEPOSITION; EVAPORATION; FILM PREPARATION; III-V SEMICONDUCTORS; ION BEAMS; NITROGEN COMPOUNDS; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM NITRIDE FILMS; ATOMIC-FORCE-MICROSCOPY; B-Y IONS; EVAPORATION RATE; ION BEAM ENHANCED DEPOSITION; SPECTROSCOPY MEASUREMENTS; SPREADING RESISTANCE; SPREADING RESISTANCE PROFILE; SYNTHESISED;

ATOMIC FORCE MICROSCOPY;

EID: 0035601294     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/18/9/341     Document Type: Article

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