A new structure design of a silicon-on-insulator MOSFET reducing the self-heating effect

International Journal of Electronics

Volumn 86, Issue 6, 1999, Pages 707-712

  Awadallah, R ^a,b   Yuan, J S ^a  

^a University of Central Florida   (United States)

^b Rockwell International   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HEAT CONDUCTION; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

CHANNEL; DRAIN; SELF HEATING EFFECT;

MOSFET DEVICES;

EID: 0032630225     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/002072199133166     Document Type: Article

References (13)

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