Ab initio mechanical response: Internal friction and structure of divacancies in silicon

Physical Review Letters

Volumn 94, Issue 2, 2005, Pages

  Ustunel H ^a   Roundy, D ^a   Arias, T A ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO MECHANICAL RESPONSE; ACTIVATION-VOLUME TENSORS; DEFECT ORIENTATIONS; DIVACANCY DEFECTS;

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CURRENT DENSITY; ELECTRON ENERGY LEVELS; ENERGY DISSIPATION; GROUND STATE; INTERNAL FRICTION; PARAMAGNETIC RESONANCE; PROBABILITY DENSITY FUNCTION; SCANNING TUNNELING MICROSCOPY;

SILICON;

EID: 18144415889     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.025503     Document Type: Article

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