Hydrogen-induced instability of the Ge(105) surface

Physical Review Letters

Volumn 94, Issue 8, 2005, Pages

  Fujikawa, Yasunori ^a   Nagao, T ^a   Yamada Takamura, Y ^a   Sakurai, T ^a   Hashimoto, T ^b   Morikawa, Y ^b,c   Terakura, K ^b,d   Lagally, M G ^e  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d HOKKAIDO UNIVERSITY   (Japan)

^e UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFERS; DESTABILIZATION; NANOSTRUCTURE GROWTH; REBONDED STRUCTURE;

CRYSTAL ATOMIC STRUCTURE; DEPOSITION; GERMANIUM; HYDROGEN; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SILICON; SUBSTRATES;

SURFACES;

EID: 18144362122     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.086105     Document Type: Article

References (25)

1. Y.-W. Mo et al., Phys. Rev. Lett. 65, 1020 (1990).
2. J. Tersoff et al., Phys. Rev. Lett. 76, 1675 (1996); C. Teichert et al., Phys. Rev. B 53, 16334 (1996).
3. J. Tersoff et al., Phys. Rev. Lett. 76, 1675 (1996); C. Teichert et al., Phys. Rev. B 53, 16334 (1996).
4. F. M. Ross et al., Phys. Rev. Lett. 80, 984 (1998); G. Medeiros-Ribero et al., Science 279, 353 (1998); J. A. Floro et al., Phys. Rev. Lett. 80, 4717 (1998).
5. F. M. Ross et al., Phys. Rev. Lett. 80, 984 (1998); G. Medeiros-Ribero et al., Science 279, 353 (1998); J. A. Floro et al., Phys. Rev. Lett. 80, 4717 (1998).
6. F. M. Ross et al., Phys. Rev. Lett. 80, 984 (1998); G. Medeiros-Ribero et al., Science 279, 353 (1998); J. A. Floro et al., Phys. Rev. Lett. 80, 4717 (1998).
7. A. Sakai and T. Tatsumi, Appl. Phys. Lett. 64, 52 (1994); S.-J. Kahng et al., Phys. Rev. Lett. 80, 4931 (1998).
8. A. Sakai and T. Tatsumi, Appl. Phys. Lett. 64, 52 (1994); S.-J. Kahng et al., Phys. Rev. Lett. 80, 4931 (1998).
9. A. Rastelli et al., Phys. Rev. Lett. 87, 256101 (2001); C. Teichert et al., Appl. Phys. Lett. 74, 588 (1999).
10. A. Rastelli et al., Phys. Rev. Lett. 87, 256101 (2001); C. Teichert et al., Appl. Phys. Lett. 74, 588 (1999).
11. D. J. Chadi, Phys. Rev. Lett. 59, 1691 (1987).
12. M. Tomitori et al., Surf. Sci. 301, 214 (1994); Z. Gai et al., Phys. Rev. B 56, 12 308 (1997); Z. Gai et al., Phys. Rev. B 59, 13009 (1999).
13. M. Tomitori et al., Surf. Sci. 301, 214 (1994); Z. Gai et al., Phys. Rev. B 56, 12 308 (1997); Z. Gai et al., Phys. Rev. B 59, 13009 (1999).
14. M. Tomitori et al., Surf. Sci. 301, 214 (1994); Z. Gai et al., Phys. Rev. B 56, 12 308 (1997); Z. Gai et al., Phys. Rev. B 59, 13009 (1999).
15. Y. Fujikawa et al., Phys. Rev. Lett. 88, 176101 (2002).
16. T. Hashimoto et al., Surf. Sci. 513, L445 (2002).
17. P. Raiteri et al., Phys. Rev. Lett. 88, 256103 (2002).
18. V. B. Shenoy et al., Appl. Phys. Lett. 81, 364 (2002).
19. K. E. Khor and S. Das Sarma, J. Vac. Sci. Technol. B 15, 1051 (1997).
20. T. Sakurai et al., Prog. Surf. Sci. 33, 3 (1990).
21. M. P. D'Evelyn et al., J. Chem. Phys. 98, 3560 (1993); B. M. H. Ning and J. E. Crowell, Surf. Sci. 295, 79 (1993).
22. M. P. D'Evelyn et al., J. Chem. Phys. 98, 3560 (1993); B. M. H. Ning and J. E. Crowell, Surf. Sci. 295, 79 (1993).
23. T. Hashimoto et al. (to be published).
24. Calculated ratio of transition dipole moments of Si-H versus Ge-H stretching modes of H-terminated Ge-Si dimers on Si(001) is 1.049. The difference is smaller than the error bars in Fig. 4.
25. E. Rudkevich et al., Phys. Rev. Lett. 81, 3467 (1998).