Flow Modulation Growth of Thick GaN by Hydride Vapor Phase Epitaxy

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 453-456

  Zhang, W ^a   Riemann, T ^b   Alves, H R ^a   Heuken, M ^c   Veit, P ^b   Pfisterer, D ^a   Hofmann, D M ^a   Blaesing, J ^b   Krost, A ^b   Christen, J ^b   Meyer, B K ^a  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

^c AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18044400480     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<453::AID-PSSA453>3.0.CO;2-L     Document Type: Article

References (14)

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