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Volumn 78, Issue 6, 2001, Pages 772-774
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Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0000768980
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1344224 Document Type: Article |
Times cited : (22)
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References (10)
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