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Journal of Applied Physics

Volumn 90, Issue 5, 2001, Pages 2191-2194

In-plane tensile-strained interfacial structure in a GaN nucleation layer on sapphire(0001)

(5) Kim, C C a Je, J H a Yi, M S b Noh, D Y b Ruterana, P c

a Pohang University of Science and Technology (POSTECH) (South Korea)

b Gwangju Institute of Science and Technology (GIST) (South Korea)

c UNIVERSITÉ DE CAEN (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 17944374563 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1388859 Document Type: Article

Times cited : (6)

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