X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers

Applied Physics Letters

Volumn 68, Issue 24, 1996, Pages 3440-3442

  Lee, Chih Hao ^a   Chi, G C ^b   Lin, C F ^b   Feng, M S ^c   Guo, J D ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000612780     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115786     Document Type: Article

References (6)

1. S. Nakamura, Y. Harada, and M. Seno, Appl. Phys. Lett. AIP 58, 2021 (1991).
2. K. G. Fertitta, A. L. Holmes, J. G. Neff, F. J. Ciuba, and R. D. Dupuis, Appl. Phys. Lett. AIP 65, 1823 (1994).
3. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. AIP 48, 353 (1986).
4. J. N. Kuznia, M. Asif Khan, D. T. Olson, R. Kaplan, and J. Freitas, J. Appl. Phys. AIP 73, 4700 (1993).
5. H. M. Manasevit, F. M. Erdmann, and W. I. Simpson, J. Electrochem. Soc. INS 118, 1864 (1971).
6. B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. AIP 68, 643 (1996).