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Volumn 86, Issue 10, 2005, Pages 1-3

Relaxation of packaging-induced strains in AlGaAs -based high-power diode laser arrays

(9) Tien, Tran Quoc a Gerhardt, Axel a Schwirzke Schaaf, Sandy a Tomm, Jens W a Müntz, Holger b Biesenbach, Jens b Oudart, Myriam c Nagle, Julien c Biermann, Mark L d

a MAX BORN INSTITUT (Germany)

b DILAS Diodenlaser GmbH (Germany)

c THALES RESEARCH AND TECHNOLOGY (France)

d EASTERN KENTUCKY UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; ELECTRONICS PACKAGING; OPTOELECTRONIC DEVICES; PHOTONS; POINT DEFECTS; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; STRAIN;

HIGH-POWER DIODE LASER ARRAYS; PACKAGING-INDUCED STRAIN; PHOTOCURRENT (PC) SPECTROSCOPY; STRAIN SYMMETRY;

SEMICONDUCTOR LASERS;

EID: 17944373881 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1880438 Document Type: Article

Times cited : (6)

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