Device deformation during low-frequency pulsed operation of high-power diode bars

Applied Physics Letters

Volumn 84, Issue 18, 2004, Pages 3525-3527

  Gerhardt, Axel ^a   Weik, Fritz ^a   QuocTran, Tien ^a   Tomm, Jens W ^a   Elsaesser, Thomas ^a   Biesenbach, Jens ^b   Müntz, Holger ^b   Seibold, Gabriele ^b   Biermann, Mark L ^c  

^a MAX BORN INSTITUT   (Germany)

^b DILAS Diodenlaser GmbH   (Germany)

^c UNITED STATES NAVAL ACADEMY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATED AGING; ARTIFICIAL MECHANICAL STRESSING; HIGH-POWER DIODE LASER ARRAYS; NONEQUILIBRIUM CARRIER LIFETIME;

AGING OF MATERIALS; BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRON TRANSITIONS; ELECTROOPTICAL EFFECTS; LASER PULSES; LASER TUNING; PHOTOCURRENTS; POINT DEFECTS; PRESSURE EFFECTS; QUANTUM WELL LASERS; THERMAL EFFECTS;

SEMICONDUCTOR LASERS;

EID: 2542424756     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1739516     Document Type: Article

References (8)

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