Quantitative strain analysis in AlGaAs-based devices

Applied Physics Letters

Volumn 82, Issue 23, 2003, Pages 4193-4195

  Tomm, Jens W ^d   Gerhardt, Axel ^d   Müller, Roland ^d   Biermann, Mark L ^a   Holland, Joseph P ^a   Lorenzen, Dirk ^b   Kaulfersch, Eberhard ^c  

^a UNITED STATES NAVAL ACADEMY   (United States)

^b JENOPTIK Laserdiode GmbH   (Germany)

^c AMIC Angewandte Micro Messtechnik GmbH   (Germany)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; FINITE ELEMENT METHOD; LATTICE CONSTANTS; LIGHT ABSORPTION; LIGHT POLARIZATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; STRAIN MEASUREMENT; WAVEGUIDES;

OPTICAL CAVITY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0038166397     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579567     Document Type: Article

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