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Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 232-235

Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(0 0 1)

(5) Gutakovsky, A K a Katkov, A V a Katkov, M I a Pchelyakov, O P a Revenko, M A a

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DEPOSITION; MOLECULAR BEAM EPITAXY; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; TRANSMISSION ELECTRON MICROSCOPY;

ANTI-PHASE DOMAINS;

SEMICONDUCTOR GROWTH;

EID: 0032680976 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)01328-1 Document Type: Article

Times cited : (6)

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