Range of defect morphologies on GaAs grown on offcut (001) Ge substrates

Journal of Electronic Materials

Volumn 27, Issue 5, 1998, Pages 451-461

  Ting, S M ^a   Fitzgerald, E A ^a   Sieg, R M ^b   Ringel, S A ^b  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b Ohio State University   (United States)

Author keywords

Anti phase domains (APDs); GaAs Ge films; Molecular beam epitaxy (MBE); Transmission electron microscopy (TEM)

Indexed keywords

EID: 0000245985     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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