Correlation between scanning-probe-induced spots and fixed positive charges in thin HfO2 films

Applied Physics Letters

Volumn 86, Issue 11, 2005, Pages 1-3

  Miyata, Noriyuki ^a   Ota, Hiroyuki ^a   Ichikawa, Masakazu ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CARRIER MOBILITY; DIELECTRIC FILMS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MOS DEVICES; SCANNING TUNNELING MICROSCOPY; THRESHOLD VOLTAGE;

CHARGE DENSITY; GATE DIELECTRICS; POSTDEPOSITION ANNEALING (PDA); SCANNING-PROBE-INDUCED SPOTS;

FERROELECTRIC THIN FILMS;

EID: 17944366013     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1884750     Document Type: Article

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