Intrinsic reoxidation of microwave plasma-nitrided gate dielectrics

Applied Physics Letters

Volumn 86, Issue 13, 2005, Pages 1-3

  Alshareef, H N ^a   Niimi, H ^a   Varghese, A ^a   Bevan, M ^a   Kuan, R ^a   Holt, J ^a   Tiner, P ^a   Khamankar, R ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CONCENTRATION (PROCESS); MATHEMATICAL MODELS; MICROWAVES; NITROGEN; OXIDATION; PLASMAS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRICAL MEASUREMENTS; GATE DIELECTRICS; REOXIDATION; SILICIDATION;

DIELECTRIC MATERIALS;

EID: 17644409379     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1895486     Document Type: Article

References (13)

1. G. Lukovsky, D. V. Tsu, R. A. Rudder, and R. J. Markunas, in Thin Film Processes II, edited by, J. L. Vossen, and, W. Kern, (Academic, Boston, 1991), p. 565.
2. T. Hori, Gate Dielectrics and MOS ULSIs (Springer, New York, 1996).
3. S. V. Hattangady, R. Kraft, D. T. Grider, M. A. Douglas, G. A. Brown, P. A. Tiner, J. W. Kuehne, P. E. Nicollian, and M. F. Pas, Tech. Dig. - Int. Electron Devices Meet. 1996, 495 (1996).
4. H. Niimi and G. Lucovsky, J. Vac. Sci. Technol. B 17, 2610 (1999).
5. E. P. Gusev, H.-C. Lu, E. L. Garfunkel, T. Gustafsson, and M. L. Green, IBM J. Res. Dev. 43, 265 (1999).
6. H. N. Alshareef, A. Karamcheti, T. Y. Lou, G. Bersuker, G. A. Brown, R. W. Murto, M. D. Jackson, H. R. Huff, P. Kraus, D. Lopes, C. Olsen, and G. Miner, Appl. Phys. Lett. 78, 3877 (2001).
7. K. Sekine, Y. Saito, M. Hirayama, and T. Ohmi, J. Vac. Sci. Technol. A 17, 3129 (1999).
8. C. H. Chen, Y. K. Fang, S. F. Ting, W. T. Hsieh, C. W. Yang, T. H. Hsu, M. C. Yu, T. L. Lee, S. C. Chen, C. H. Yu, and M. S. Liang, IEEE Trans. Electron Devices 49, 80 (2002).
9. K. Sekine, Y. Saito, M. Hirayama, and T. Ohmi, J. Vac. Sci. Technol. A 17, 3129 (1999).
10. A. Nara, N. Yasuda, H. Satake, and A. Toriumi, Extended Abstracts of SSDM. 2000, 452 (2000).
11. C. Bowen, C. Fernando, G. Klimeck, A. Chatterjee, R. Lake, D. Blanks, J. Hu, J. Davis, M. Kulkarni, S. Hattangady, and I. C. Chen, Tech. Dig. - Int. Electron Devices Meet. 1997, 869 (1997).
12. K. Koh, H. Niimi, G. Lucovsky, and M. L. Green, Jpn. J. Appl. Phys., Part 1 37, 709 (1998).
13. K. N. Tu, J. W. Mayer, and L. C. Feldman, Electronic Thin Film Science for Electrical Engineers and Materials Scientist (Macmillan, New York, 1992).