Nanoscale ferroelectric field-effect writing and reading using scanning tunnelling spectroscopy

Nature Materials

Volumn 4, Issue 5, 2005, Pages 378-382

  Kuffer, Olivier ^a,b   Maggio Aprile, Ivan ^a   Fischer, Øystein ^a  

^a UNIVERSITY OF GENEVA   (Switzerland)

^b PHASIS S rl   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON TUNNELING; ELECTRONIC PROPERTIES; FERROELECTRIC MATERIALS; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; POLARIZATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS;

ATOMIC MANIPULATION; FERROELECTRIC FIELD-EFFECT WRITING AND READING; INSULATING LAYERS; SCANNING TUNNELING SPECTROSCOPY (STS);

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 17644370642     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat1364     Document Type: Review

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