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Volumn 45, Issue 6, 2004, Pages 1557-1561
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Wafer bonding characteristics for 3C-SiC-on-insulator structures using PECVD oxide
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Author keywords
3c SiC; HF; MEMS; PECVD oxide; SiCOI; Wafer bonding
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Indexed keywords
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EID: 17544363897
PISSN: 03744884
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (7)
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References (13)
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