Electrical and magnetic characteristics of MBE-grown GaMnN

Journal of Superconductivity and Novel Magnetism

Volumn 18, Issue 1, 2005, Pages 69-73

  Albrecht, J D ^a   Van Nostrand, J E ^a   Claflin, B ^a,b   Liu, Y ^c   Nathan, M I ^c   Ruden, P P ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

^c UNIVERSITY OF MINNESOTA   (United States)

Author keywords

Ferromagnetic semiconductor; GaMnN; Hydrostatic pressure; Molecular beam epitaxy

Indexed keywords

FERROMAGNETIC SEMICONDUCTORS; GAMNN; HALL EFFECT MEASUREMENTS; SEMICONDUCTOR LAYERS;

FERROMAGNETIC MATERIALS; GROWTH (MATERIALS); HALL EFFECT; HYDROSTATIC PRESSURE; HYSTERESIS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 17444422916     PISSN: 15571939     EISSN: 15571947     Source Type: Journal    
DOI: 10.1007/s10948-005-2152-x     Document Type: Article

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