Characteristics of 0.25 μm ferroelectric nonvolatile memory with a Pb(Zr, Ti)O3 capacitor on a metal/via-stacked plug

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2098-2101

  Amanuma, Kazushi ^a   Kobayashi, Sota ^a   Tatsumi, Toru ^a   Maejima, Yukihiko ^a   Hada, Hiromitsu ^a   Yamada, Junichi ^a   Miwa, Tohru ^a   Koike, Hiroki ^a   Toyoshima, Hideo ^a   Kunio, Takemitsu ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Bit line voltage; Fatigue; Ferroelectric; Hysteresis; Imprint; Nonvolatile memory; Polarization; Pulse response; PZT

Indexed keywords

CAPACITORS; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRODES; FATIGUE OF MATERIALS; FERROELECTRIC MATERIALS; HYSTERESIS; LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NONVOLATILE STORAGE; POLARIZATION; REACTIVE ION ETCHING; THIN FILMS;

BIT LINE VOLTAGE; IMPRINT ENDURANCE; METAL VIA STACKED PLUG; PULSE RESPONSE;

CRYSTALLINE MATERIALS;

EID: 0033689674     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2098     Document Type: Article

References (3)

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2. S. Kobayashi, K. Amanuma and H. Hada: IEEE Electron Devices Lett. 19 (1998) 417.
3. P. D. Maniar, R. Moazzami, R. E. Jones, A.C. Campbell and C. J. Mogab: Mater. Res. Symp. Proc. 310 (1993) 151.