Structure and Properties of Silicon Thin Films Deposited at Low Substrate Temperatures

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 8 B, 2003, Pages

  Fejfar, Antonín ^a   Mates, Tomáš ^a   Fojtík, Petr ^a   Ledinský, Martin ^a   Luterová, Kateřina ^a   Stuchlíková, Ha ^a   Pelant, Ivan ^a   Kočka, Jan ^a   Baumruk, Vladimír ^b   Macková, Anna ^a   Ito, Manabu ^c   Ro, Kazuyoshi ^c   Uyama, Haruo ^c  

^a INSTITUTE OF MATHEMATICS   (Czech Republic)

^b CHARLES UNIVERSITY   (Czech Republic)

^c TOPPAN PRINTING CO LTD   (Japan)

Author keywords

A Si:H; Crystallinity; Electronic transport; Hydrogen; Low temperature growth; Plastic substrates; c Si:H

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; FILM GROWTH; GRAIN SIZE AND SHAPE; PERCOLATION (SOLID STATE); SILICON; SUBSTRATES;

LOW TEMPERATURE GROWTH;

THIN FILMS;

EID: 17144454805     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l987     Document Type: Article

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