GaAsSb: A novel material for near infrared photodetectors on GaAs substrates

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 4, 2002, Pages 817-822

  Sun, Xiaoguang ^b   Wang, Shuling ^b   Hsu, Jean S ^b   Sidhu, Rubin ^b   Zheng, Xiaoguang G ^b   Li, Xiaowei ^b   Campbell, Joe C ^a,b   Holmes Jr , Archie L ^a,b  

^a IEEE   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

Photodetectors; Photodiodes; Photoluminescence; Quantum wells

Indexed keywords

AVALANCHE PHOTODIODE; MULTIPLICATION NOISE; NEAR INFRARED PHOTODETECTORS;

AVALANCHE DIODES; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; PHOTODIODES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SPURIOUS SIGNAL NOISE; SUBSTRATES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036661958     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2002.800848     Document Type: Article

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