Effects of amorphizing species' ion mass on the end-of-range damage formation in silicon

Applied Physics Letters

Volumn 80, Issue 22, 2002, Pages 4163-4165

  Clark, Mark H ^a   Jones, Kevin S ^a   Haynes, Tony E ^b   Barbour, Charles J ^c   Minor, Kenneth G ^c   Andideh, Ebrahim ^d  

^a University of Florida   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEFECT SIZE; DEPTH PROFILE; DIFFUSIVITY ENHANCEMENT; END-OF-RANGE DAMAGES; INTERSTITIALS; ION MASS; POSTIMPLANTATION ANNEALING; TIME AVERAGES;

BORON; BORON COMPOUNDS; DEFECT DENSITY; GERMANIUM; LEAD; SECONDARY ION MASS SPECTROMETRY; TIN; TRANSMISSION ELECTRON MICROSCOPY;

IONS;

EID: 79956047256     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1483383     Document Type: Article

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