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Volumn 80, Issue 22, 2002, Pages 4163-4165
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Effects of amorphizing species' ion mass on the end-of-range damage formation in silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS LAYER;
CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY;
DEFECT SIZE;
DEPTH PROFILE;
DIFFUSIVITY ENHANCEMENT;
END-OF-RANGE DAMAGES;
INTERSTITIALS;
ION MASS;
POSTIMPLANTATION ANNEALING;
TIME AVERAGES;
BORON;
BORON COMPOUNDS;
DEFECT DENSITY;
GERMANIUM;
LEAD;
SECONDARY ION MASS SPECTROMETRY;
TIN;
TRANSMISSION ELECTRON MICROSCOPY;
IONS;
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EID: 79956047256
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1483383 Document Type: Article |
Times cited : (14)
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References (16)
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