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Volumn 80, Issue 22, 2002, Pages 4163-4165

Effects of amorphizing species' ion mass on the end-of-range damage formation in silicon

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEFECT SIZE; DEPTH PROFILE; DIFFUSIVITY ENHANCEMENT; END-OF-RANGE DAMAGES; INTERSTITIALS; ION MASS; POSTIMPLANTATION ANNEALING; TIME AVERAGES;

EID: 79956047256     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1483383     Document Type: Article
Times cited : (14)

References (16)
  • 16
    • 79957931568 scopus 로고
    • Ph.D. thesis, Stanford University
    • P. A. Packan, Ph.D. thesis, Stanford University, 1991.
    • (1991)
    • Packan, P.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.