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Applied Surface Science

Volumn 245, Issue 1-4, 2005, Pages 391-399

Photoluminescence and characteristics of terbium-doped AlN film prepared by magnetron sputtering

(9) Liu, F S a,b Ma, W J d Liu, Q L a Liang, J K a,c Luo, J a Yang, L T a Song, G B a,b Zhang, Y a Rao, G H a

a INSTITUTE OF PHYSICS (China)

b SOUTHWEST UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

c INTERNATIONAL CENTRE FOR MATERIALS PHYSICS (China)

d BEIHANG UNIVERSITY (China)

Author keywords

Aluminum nitride; Film; Photoluminescence; Tb doped

Indexed keywords

ALUMINUM NITRIDE; AMORPHOUS FILMS; CRYSTALLINE MATERIALS; HEAT LOSSES; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; TERBIUM; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE FILMS; CRYSTALLINITY; DECAY TIME; RARE EARTH (RE) DOPANTS; TB-DOPED;

SEMICONDUCTING FILMS;

EID: 17044381329 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2004.10.034 Document Type: Article

Times cited : (10)

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