In-situ PR study of the confined states in AlGaAs/GaAs surface QW

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 108-111

  Chen, Pingping ^a   Miao, Zhonglin ^a   Lu, Wei ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III V materials

Indexed keywords

APPROXIMATION THEORY; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS;

ALUMINUM GALLIUM ARSENIDE; PHOTOREFLECTANCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035399374     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00642-X     Document Type: Conference Paper

References (5)