Optical properties of GaAs/AlGaAs near a surface quantum well

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 225, Issue 1-3, 1997, Pages 175-178

  Liu, X Q ^a,b,c   Lu, W ^a,b,c   Xu, W L ^a,b,c   Mu, Y M ^a,b,c   Chen, X S ^a,b,c   Ma, Z H ^a,b,c   Shen, S C ^a,b,c   Fu, Y ^d   Willander, M ^d  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c School of Electronic Science and Engineering   (China)

^d UNIVERSITY OF GOTHENBURG   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; BLUE SHIFT; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR ALLOYS;

BARRIER THICKNESS; BUILT-IN FIELDS; CONFINEMENT POTENTIAL; GAAS QUANTUM WELLS; NEAR SURFACES; REFLECTION SPECTRA; STRENGTH RATIOS; TRANSITION LINES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0040569205     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9601(96)00828-6     Document Type: Article

References (5)

1. J.M. Moison, K. Elcess, F. Houzay, J.Y. Marzin, J.M. Gerard, F. Barthe and M. Bensoussan, Phys. Rev. B 41 (1990) 12945.
2. J. Dreybrodt, A. Forchel and J.P. Reithmaier, Phys. Rev. B 48 (1993) 14741.
3. R. Tsu and L. Esaki, Appl. Phys. Lett. 22 (1973) 562.
4. R.M. Cohen, M. Kitamura and Z.M. Fang, Appl. Phys. Lett. 50 (1987) 1675.
5. S.C. Shen, Optical properties of semiconductors (1993) p. 518.