SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 45, Issue 9, 2001, Pages 1549-1557

Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon

(2) Brody, Jed b Rohatgi, Ajeet a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b 326917 Georgia Tech Station ^* (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRONIC DENSITY OF STATES; PASSIVATION; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SILICON NITRIDE;

SURFACE PASSIVATION;

SEMICONDUCTING SILICON;

EID: 0035449469 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(01)00169-1 Document Type: Article

Times cited : (16)

References (9)

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2
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- Centre for Photovoltaic Engineering, University of New South Wales, Sydney, Australia
- (1999) Crystalline silicon solar cells: Advanced surface passivation and analysis
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3
- 0003870189
- PhD Thesis (in German), University of Hannover, Germany
- (1998) Charakterisierung und mehrdimensionale Simulation von MIS-Inversionsschichtsolarzellen (Characterization and multi-dimensional simulation of MIS inversion-layer solar cells)
- Kuhlmann, B.¹

4
- 0000617308
- Surface recombination in semiconductors
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- Fitzgerald, D.J.¹ Grove, A.S.²

5
- 0023961305
- 2 interface recombination parameters using a gate-controlled point-junction diode under illumination
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- Girisch, R.B.M.¹ Mertens, R.P.² De Keersmaecker, R.F.³

6
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- Surface effects on p-n junctions:Characteristics of surface space-charge regions under non-equilibrium conditions
- (1966) Solid-State Electron , vol.9 , pp. 783-806
- Grove, A.S.¹ Fitzgerald, D.J.²

7
- 36549096341
- Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity
- (1987) J Appl Phys , vol.61 , pp. 2282-2293
- Luke, K.L.¹ Cheng, L.²

8
- 0031476154
- Recombination at the silicon nitride/silicon interface
- (1997) J Vac Sci Technol A , vol.15 , pp. 2418-2425
- Elmiger, J.R.¹ Schieck, R.² Kunst, M.³

9
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- Injection-level dependent surface recombination velocities at the silicon-plasma silicon nitride interface
- (1995) Appl Phys Lett , vol.66 , pp. 2828-2830
- Aberle, A.G.¹ Lauinger, T.² Schmidt, J.³ Hezel, R.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.