Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction

Materials Science in Semiconductor Processing

Volumn 6, Issue 5-6, 2003, Pages 417-420

  Ohno, Takeo ^a   Oyama, Yutaka ^a,b   Suto, Ken ^a,b   Nishizawa, Jun Ichi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

Area selective epitaxy; GaAs; Regrowth; Semiconductor interfaces; Sidewall; Tunnel junction

Indexed keywords

ARSENIC COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CURRENT DENSITY; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; STOICHIOMETRY;

AREA-SELECTIVE EPITAXY; REGROWTH; SEMICONDUCTOR INTERFACES; SIDEWALLS;

TUNNEL JUNCTIONS;

EID: 1642587271     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.08.014     Document Type: Conference Paper

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