Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum

Journal of Crystal Growth

Volumn 259, Issue 1-2, 2003, Pages 61-68

  Oyama, Yutaka ^a   Ohno, Takeo ^a   Suto, Ken ^a   Nishizawa, Jun Ichi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

A1. Doping; A1. Impurities; A1. Surface processes; A3. Atomic layer epitaxy; B1. Gallium compounds; B2. Semiconducting gallium arsenide

Indexed keywords

BERYLLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; STOICHIOMETRY; SUBSTRATES; ULTRAHIGH VACUUM;

PRECURSORS;

THIN FILMS;

EID: 0141964074     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01585-9     Document Type: Article

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