Characterization of MOCVD-grown InNAs/GaAs quantum wells

Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Volumn , Issue , 2002, Pages 653-654

  Cao, Hongjun ^a   Nuntawong, Noppadon ^a   El Emawy, Abdel Rahman A ^a   Osiński, Marek ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION;

BANDGAP;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036459044     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. H. Naoi, D.M. Shaw, Y. Naoi, G.J. Collins, and S. Sakai, "Growth of InNAs by low-pressure metalorganic chemical vapor deposition employing microwave-cracked nitrogen and in situ generated arsine radicals", J. Cryst. Growth 222, 511-517 (2001).
2. Y.C. Kao, T.P.E. Broekaert, H.Y. Liu, S. Tang, I.H. Ho, and G.B. Stringfellow, "Lattice-matched InAsN (x = 0.38) on GaAs grown by molecular beam epitaxy", in III-Nitride, SiC and Diamond Materials for Electronic Devices, D.K. Gaskill, C.D. Brandt, and R.J. Nemanich, eds., 8-12 April 1996, San Francisco, CA, MRS Symp. Proc. 423, 335-340 (1996).
3. R. Beresford, K.S. Stevens, and A.F. Schwartzman, "Microstructure and composition of InAsN alloys grown by plasma-source molecular beam epitaxy", J. Vac. Sci. & Technol. B 16, 1293-1296 (1998).
4. J.-S. Wang, H.-H. Lin, L.-W. Song, and G.-R. Chen, "Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy", J. Vac. Sci. & Technol. B 19, 202-206 (2001).
5. T. Yang, S. Nakajima, and S. Sakai, "Tight-binding calculation of electronic structures of InNAs ordered alloys", Jpn. J. Appl. Phys., Pt. 2 36, L320-L322 (1997).
6. 1-x alloys from tight-binding calculations", Appl. Phys. Lett. 76, 3576-3578 (2000).