SCOPUS 정보 검색 플랫폼

Materials Science in Semiconductor Processing

Volumn 4, Issue 6, 2001, Pages 475-481

Detailed structural analysis of semiconductors with X-ray scattering

(3) Fewster, Paul F a Holy, Vaclav b Andrew, Norman L a

a MALVERN INSTRUMENTS LTD (United Kingdom)

b MASARYK UNIVERSITY (Czech Republic)

Author keywords

Gallium nitride; Microstructure; Quantum dots; Reciprocalspace mapping; X ray scattering

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; RELIABILITY THEORY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; X RAY SCATTERING;

RECIPROCAL SPACE MAPS;

GALLIUM NITRIDE;

EID: 0035574415 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/S1369-8001(02)00005-7 Document Type: Conference Paper

Times cited : (12)

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