Nitrogen-induced enhancement of the electron effective mass in InN xAs1-x

Applied Physics Letters

Volumn 80, Issue 5, 2002, Pages 796-798

  Hung, W K ^a   Cho, K S ^a   Chern, M Y ^a   Chen, Y F ^a   Shih, D K ^a   Lin, H H ^a   Lu, C C ^b   Yang, T R ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ANTI-CROSSING MODELS; CONDUCTION BAND EDGE; EFFECTIVE MASS; ELECTRON CONCENTRATION; ELECTRON EFFECTIVE MASS; EXPERIMENTAL DATA; HALL EFFECT MEASUREMENT; III-N-V; INFRARED REFLECTIVITY;

ELECTRONIC STRUCTURE;

NITROGEN;

EID: 79956036611     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1436524     Document Type: Article

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