High-temperature microwave characteristics of GaAs MESFET devices with AlAs buffer layers

IEEE Electron Device Letters

Volumn 17, Issue 1, 1996, Pages 16-18

  Ito, Chris ^a,b   Jenkins, Tom ^a,b   Trombley, Gerald ^c   Lee, Rainier ^a,c   Reston, Rocky ^c   Havasy, Charles ^a,c   Johnson, Belinda ^c   Eppers, Chris ^c  

^a IEEE

^b NE Consortium for Eng Education ^*  (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE PROPERTIES; LEAKAGE CURRENTS; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

BUFFER THICKNESS; MICROWAVE PERFORMANCE;

MESFET DEVICES;

EID: 0029780143     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.475563     Document Type: Article

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