Structural and electrical characterization of porous silicon carbide formed in n-6H-SiC substrates

Electrochemical and Solid-State Letters

Volumn 6, Issue 2, 2003, Pages

  Soloviev, S ^a   Das, T ^a   Sudarshan, T S ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CARRIER CONCENTRATION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTROCHEMISTRY; MORPHOLOGY; POROUS MATERIALS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY;

ELECTROCHEMICAL ANODIZATION; MERCURY PROBE SCHOTTKY CONTACTS;

SILICON CARBIDE;

EID: 0037326186     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1534733     Document Type: Article

References (7)

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