A study of deep traps at the SiO2/6H-SiC interface relying upon the nonequilibrium field effect

Semiconductors

Volumn 35, Issue 4, 2001, Pages 468-473

  Ivanov, P A ^a   Samsonova, T P ^a   Panteleev, V N ^a   Polyakov, D Yu ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035315364     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1365197     Document Type: Article

References (16)

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