Homoepitaxial growth of 4H-SiC on porous substrate using bis-trimethylsilylmethane precursor

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 267-270

  Jeong, Jae Kyeong ^a   Um, Myung Yoon ^a   Na, Hoon Joo ^a   Kim, Bum Seok ^a   Song, In Bok ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

Author keywords

BTMSM; CVD; Homoepitaxy; Porous SiC; RSM

Indexed keywords

CHEMICAL VAPOR DEPOSITION; POROUS MATERIALS; SILICON CARBIDE; STACKING FAULTS; SUBSTRATES; FLOW OF GASES; TEMPERATURE;

FULL-WIDTH-AT-HALF-MAXIMUM (FWHM); HOMOEPITAXY; POROUS SILICON CARBIDE; TRIANGULAR STACKING FAULT (TSF); BTMSM; CARRIER GAS FLOW RATES; DIFFUSION LIMITED; DOUBLE-POSITIONING BOUNDARIES; HOMO EPITAXIES; HOMOEPITAXIAL GROWTH; POROUS SIC; X RAY ROCKING CURVE;

EPITAXIAL GROWTH; SILICON CARBIDE;

EID: 0037753955     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.267     Document Type: Article

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