Self-assembled germanium nanocrystals on SiC{0001}

Materials Science and Engineering: B

Volumn 88, Issue 2-3, 2002, Pages 259-263

  Schroeter, B ^a   Komlev, K ^a   Richter, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Germanium; Molecular Beam Epitaxy; Quantum dots; Scanning Tunneling Microscopy; Self assembling; Silicon carbide

Indexed keywords

ENERGY GAP; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SILICON CARBIDE; STOICHIOMETRY; THERMOOXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

IN-DIRECT GAP SEMICONDUCTORS; ISLAND FORMATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1642393121     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00882-0     Document Type: Conference Paper

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