Germanium on SiC(0001): surface structure and nanocrystals

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 247-250

  Schroter B ^a   Komlev, K ^a   Kaiser, U ^a   Hess G ^a   Kipshidze, G ^b   Richter, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL ORIENTATION; MONOATOMIC WETTING LAYER; STRANSKI-KRASTANOV GROWTH MODE; SUPERSTRUCTURES; SURFACE PREPARATION;

CRYSTAL ORIENTATION; DEPOSITION; LOW ENERGY ELECTRON DIFFRACTION; LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SILICON CARBIDE; STRAIN; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; WETTING;

SEMICONDUCTING GERMANIUM;

EID: 14344284970     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)

1. D. Bimberg, M. Grundmann, N. N. Ledentsov, Quantum Dot Heterostructures, 1999, Wiley, Chichester, England.
2. F. M. Ross, R. M. Tromp, M. C. Reuter, Science 286 (1999) p. 1931.
3. O. G. Schmidt, C. Lange, K. Eberl, O. Kienzle, F. Ernst, Appl. Phys. Lett. 71 (1997) p.2340.
4. N. Motta, et al., Surf. Sci. 406 (1998) p. 254.
5. M. Okada, A. Muto, H. Ikeda, S. Zaima, Y. Yasuda, J. Crystal Growth 188 (1998) p. 119.
6. G. Heß et al., to be published in Thin Solid Films.