A three-terminal soi gated varactor for rf applications

IEEE Transactions on Electron Devices

Volumn 48, Issue 2, 2001, Pages 289-293

  Hui, F P S ^a   Wong, W M Y ^a   Chen, Z ^a   Lau, J ^a   Chan, P C H ^a   Ko, P K ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Passive components; Rf, soi; Varactor

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; RADIO FREQUENCY AMPLIFIERS; SILICON ON INSULATOR TECHNOLOGY; TUNING; VARIABLE FREQUENCY OSCILLATORS;

GATED VARACTORS;

VARACTORS;

EID: 0035249841     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.902729     Document Type: Article

References (6)

1. M. Zannoth et al., A fully integrated VCO at 2 GHz in Proc. 1998 IEEE Solid-State Circuit Conf. Dig. Tech. Papers, Feb. 1998, pp. 224-225.
2. D. Hisamoto, S. Tanaka, T. Tanimoto, and S. KimuraSuspended SOI structure for advanced 0.1 mm CMOS RF devices IEEE Trans. Electron Devices, vol. 45, pp. 1039-1046, May 1998.
3. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, pp. 114-116.
4. J. N. Burghartz, M. Soyuer, and K. A. JenkinsIntegrated RF and microwave components in BiCMOS technology IEEE Trans. Electron Devices, vol. 43, pp. 1559-1570, Sept. 1996.
5. T. Sorraphanth et al., Analysis and optimization of accumulation-mode varactor for RF ICs in Dig. Tech. Papers, Symp. VLSI Circuits, 1998, pp. 32-33.
6. R. Castello, P. Erratico, S. Manzini, and F. SveltoA +/- 30% tuning range varactor compatible with future scaled technology in Dig. Tech. Papers, Symp. VLSI Circuits, 1998, pp. 34-35.