A physical model of a CMOS varactor with high capacitance tuning range and its application to simulate a voltage controlled oscillator

2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Volumn , Issue , 2001, Pages 609-612

  Maget, J ^a,b   Kraus, R ^a   Tiebout, M ^b  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

integrated VCO; modeling; simulation; varactor

Indexed keywords

CIRCUIT OSCILLATIONS; MODELS; OSCILLATORS (ELECTRONIC); OSCILLISTORS; SEMICONDUCTOR DEVICES; VARACTORS; VARIABLE FREQUENCY OSCILLATORS;

CAPACITANCE TUNING; CONNECTING WIRES; FREQUENCY-TUNING; INTEGRATED VCO; ITS APPLICATIONS; MULTI-FINGER LAYOUTS; SIMULATION; VOLTAGE-DEPENDENT CAPACITANCES;

CAPACITANCE;

EID: 84961859284     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2001.984593     Document Type: Conference Paper

References (3)

1. J. Maget, M. Tiebout and R. Kraus, "A Varactor with High Capacitance Tuninge Range in Standard 0.25μm CMOS Technology", Sept. 2001, ESSDERC 2001.
2. P. Andreani and S. Mattisson, "On the Use of MOS Varactors in RF VCO's", IEEE Journal of Solid State Circuits, Vol. 35, No. 6, June 2000, pp. 905-910.
3. J. Maget, M. Tiebout and R. Kraus, "Comparison of CMOS VCOs for UMTS tuned by Standard and Novel Varactors in Standard 0.25μm Technology", Sept. 2001, ESSCIRC 2001.