Temperature-Induced Switching-Over of the Luminescence Transitions in GaInNAs/GaAs Quantum Wells

Chinese Physics Letters

Volumn 21, Issue 3, 2004, Pages 548-551

  Bian, Li Feng ^a   Jiang, De Sheng ^a   Liang, Xiao Gan ^a   Lu, Shu Long ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; RAPID THERMAL ANNEALING; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE DISTRIBUTION;

EXCITATION POWER DENSITY; GAAS QUANTUM WELLS; LOCALISED; LUMINESCENCE TRANSITIONS; PHOTOLUMINESCENCE PEAK; PHOTOLUMINESCENCE SPECTRUM; S SHAPE; SINGLE QUANTUM WELL; TEMPERATURE DEPENDENCE; TEMPERATURE-INDUCED;

ACTIVATION ENERGY;

EID: 1642323741     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/3/037     Document Type: Article

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