Native defect properties in β-SiC: Ab initio and empirical potential calculations

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 180, Issue 1-4, 2001, Pages 286-292

  Gao, Fei ^a   Bylaska, Eric J ^a   Weber, William J ^a   Corrales, L Rene ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

Ab initio calculation; Defect properties; Molecular dynamics; SiC

Indexed keywords

ANNEALING; COMPUTATIONAL METHODS; COMPUTER SIMULATION; IRRADIATION; MOLECULAR DYNAMICS; POINT DEFECTS; POTENTIAL ENERGY; RADIATION DAMAGE;

ANTISITE DEFECTS; DENSITY FUNCTIONAL THEORY (DFT); INTERSTITIALS; TERSOFF POTENTIAL; VACANCIES;

SILICON CARBIDE;

EID: 0035365126     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00430-X     Document Type: Conference Paper

References (18)