Influence of substrate dc bias on crystallinity of silicon films grown at a high rate from inductively-coupled plasma CVD

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 39-42

  Kosku, N ^a   Murakami, H ^a   Higashi, S ^a   Miyazaki, S ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

High rate deposition; Inductively coupled plasma; Microcrystalline silicon; Substrate bias

Indexed keywords

CARRIER MOBILITY; CRYSTAL STRUCTURE; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INDUCTIVELY COUPLED PLASMA; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTION KINETICS; SILICON;

HIGH RATE DEPOSITION; MICROCRYSTALLINE SILICON; SILICON FILMS; SUBSTRATE BIAS;

CRYSTALLIZATION;

EID: 15944395421     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.063     Document Type: Conference Paper

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