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Volumn 264-268, Issue PART 1, 1998, Pages 73-76

Dissolution and growth of silicon carbide crystals in melt-solutions

Author keywords

Bulk Crystals; Liquid Phase Growth; Polytypes; Surface Morphology

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH FROM MELT; DISSOLUTION; ELECTRON MICROSCOPY; GRAIN SIZE AND SHAPE; LIGHT MEASUREMENT; LIQUID METALS; MORPHOLOGY; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SILICON CARBIDE; X RAY CRYSTALLOGRAPHY;

EID: 3743087152     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.73     Document Type: Article
Times cited : (18)

References (7)
  • 3
    • 0003343627 scopus 로고
    • LPE of SiC and SiC-AlN
    • Ed. G.L. Harris, EMIS datareviews series No.13
    • V.A. Dmitriev, LPE of SiC and SiC-AlN, in: Properties of Silicon Carbide, Ed. G.L. Harris, EMIS datareviews series No.13 (1995), p.214.
    • (1995) Properties of Silicon Carbide , pp. 214
    • Dmitriev, V.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.