State of the art 6″ SI GaAs wafers made of conventionally grown LEC-crystals

Journal of Crystal Growth

Volumn 198-199, Issue PART I, 1999, Pages 336-342

  Flade, T ^a   Jurisch, M ^a   Kleinwechter, A ^a   Kohler A ^a   Kretzer, U ^a   Prause, J ^a   Reinhold, Th ^a   Weinert, B ^a  

^a FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

Author keywords

Carbon control; Homogeneity; LEC; Semi insulating gaas

Indexed keywords

CRYSTAL GROWTH; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STRENGTH OF MATERIALS;

CARBON CONTROL GROWTH TECHNOLOGY; LIQUID ENCAPSULATED CRYSTAL GROWTH (LEC);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 18344410159     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01072-0     Document Type: Article

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