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Journal of Crystal Growth

Volumn 180, Issue 3-4, 1997, Pages 517-523

Numerical simulation of the LEC-growth of GaAs crystals with account of high-pressure gas convection

(3) Fainberg, J a Leister, H J a Muller G a

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

Czochralski crystal growth (LEC); Finite volume method; GaAs; Global numerical simulation; Turbulence modelling

Indexed keywords

BUOYANCY; COMPUTER SIMULATION; COMPUTER SOFTWARE; CRYSTAL GROWTH FROM MELT; FINITE VOLUME METHOD; LAMINAR FLOW; MATHEMATICAL MODELS; PHASE INTERFACES; PRESSURE EFFECTS; STRESS ANALYSIS; THERMAL STRESS; TURBULENCE;

LIQUID ENCAPSULATED CZOCHRALSKI (LEC) TECHNIQUE; SOFTWARE PACKAGE STHAMAS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031250753 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00266-2 Document Type: Article

Times cited : (29)

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