Developments in vertical Bridgman growth of large diameter GaAs

III-Vs Review

Volumn 10, Issue 5, 1997, Pages 30-34

  Sonnenberg, K ^a   Kussel E ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

COST EFFECTIVENESS; DISLOCATIONS (CRYSTALS); ELASTICITY; SINGLE CRYSTALS; STRESSES; TWINNING;

VERTICAL BRIDGMAN TECHNIQUE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0013455772     PISSN: 09611290     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0961-1290(97)81284-7     Document Type: Article

References (5)

1. M. Althaus, K. Sonnenberg, E. Küssel and R. Naeven, J. Cryst. Growth 166 (1996) 566.
2. M. Althaus, Jül-Report, ISSN 0944-2952/D82 (1996).
3. K. Koai, K. Sonnenberg and H. Wenzl, J. Cryst. Growth 137 (1994) 59.
4. E.D. Bourret, J.B. Guiltron and E.E. Haller, J. Cryst. Growth 85 (1987) 124.
5. T.I. Ejim, International Conference on InP and Related Materials, Cardiff IEEE Publ. (1991) 196.