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Volumn 272, Issue 1-4, 2004, Pages 489-495

Characterization of GaN grown on patterned Si(1 1 1) substrates

(10) Wang, D a Dikme, Y b Jia, S a Chen, K J a Lau, K M a Van Gemmern, P b Lin, Y C b Kalisch, H b Jansen, R H b Heuken, M b,c

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

b RWTH AACHEN UNIVERSITY (Germany)

c AIXTRON AG (Germany)

Author keywords

A1. Characterization; A1. Defects; A1. Interfaces; A1. Stresses; A3. Metalorganic chemical vapor epitaxy; B2. Semiconducting III V materials

Indexed keywords

CHARACTERIZATION; CRYSTAL DEFECTS; INDUCTIVELY COUPLED PLASMA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON; STRESSES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BANDGAP; INTERFACES; SEMICONDUCTING III-V MATERIALS; TRIMETHYLGALLIUM (TMGA);

GALLIUM NITRIDE;

EID: 9944231364 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.09.021 Document Type: Article

Times cited : (9)

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