Microwave performance of AlGaN/GaN high electron mobility transistors on Si(111) substrates

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 397-400

  Chumbes, E M ^a   Schremer, A T ^a   Smart, J A ^a   Hogue, D ^a   Komiak, J ^a   Shealy, J R ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON GAS; GATES (TRANSISTOR); HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; MICROWAVES; SCATTERING PARAMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033342073     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)