Tantalum and tantalum nitride films deposited by electron cyclotron resonance sputtering as barriers to copper diffusion

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 5, 1999, Pages 2385-2389

  Ono, Toshiro ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22844457264     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590923     Document Type: Article

References (4)

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4. T. Ono, H. Nishimura, M. Shimada, and S. Matsuo, J. Vac. Sci. Technol. A 12, 1281 (1994).